NCE30P50G Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE30P50G
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P50G uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =-30V,I_D =-50A
R_DS(ON) < 7mΩ @ V_GS=-10V
D
G
S
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Marking and pin assignment
Application
● Battery and loading switching
100% UIS TESTED!
DFN 5x6 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE30P50G
NCE30P50G
DFN 5x6 EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±20
-50
-70
35
0. 28
300
-55 To 150
Unit
V
V
A
A
W
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
3.6
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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