NCE30P25S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE30P25S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P25S uses advanced trench technology to provide
excellent R_DS(ON), This device is suitable for use as a load
switch or power management.
General Features
● V_DS = -30V,I_D = -25A
R_DS(ON) <9mΩ @ V_GS=-10V
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Power management
● Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
30P25
NCE30P25S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-30V,V_GS=0V
Limit
-30
±20
-25
-70
3.5
-55 To 150
Unit
V
V
A
A
W
℃
36
℃/W
Min Typ Max Unit
-30 -33
-
V
-
-
-1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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