NCE30P12S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE30P12S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P12S uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
● V_DS = -30V,I_D = -12A
R_DS(ON) < 25mΩ @ V_GS=-4.5V
R_DS(ON) < 16mΩ @ V_GS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM applications
●Load switch
●Power management
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
30P12
NCE30P12S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±20
-12
-48
3
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
41.67
℃/W
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
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