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NCE30H12K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE30H12K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H12K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =30V,ID =120A
RDS(ON) <4.5m⦠@ VGS=10V (Typ:3.5mâ¦)
Schematic diagram
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE30H12K
NCE30H12K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
120
84
400
120
350
-55 To 175
Unit
V
V
A
A
A
W
mJ
â
Wuxi NCE Power Semiconductor Co., Ltd
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