NCE30H10 Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE30H10G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H10G uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =30V,I_D =100A
R_DS(ON) <2.5 mΩ @ V_GS=10V
R_DS(ON) <3.5mΩ @ V_GS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Marking and pin assignment
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
NCE30H10G
Device
NCE30H10G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_D (100℃)
I_DM
P_D
T_J,T_STG
Limit
30
±20
100
70.7
300
65
0.43
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃
Wuxi NCE Power Semiconductor Co., Ltd
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