NCE30D2519K Datasheet, PDF (1/9 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N&P-Channel V Complementary MOSFET

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Pb Free Product
NCE30D2519K
NCE N&P-Channel V Complementary MOSFET
Description
The NCE30D2519K uses advanced trench technology
and design to provide excellent R_DS(ON) with low gate
charge. It can be used in a wide variety of applications.
General Features
N channel
● V_DS =30V,I_D =25A
R_DS(ON) <12mΩ @ V_GS=10V
R_DS(ON) <18mΩ @ V_GS=4.5V
p channel
● V_DS =-30V,I_D =-19A
R_DS(ON) <35mΩ @ V_GS=-10V
R_DS(ON) <65mΩ @ V_GS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● H-bridge
● Inverters
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
30D2519K
NCE30D2519K
TO-252-4L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_C=25℃
T_C=100℃
25
-19
I_D
17.7
-13.4
I_DM
90
-60
Maximum Power Dissipation
T_C=25℃
P_D
21
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
7
Unit
V
V
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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