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NCE3060G Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE3060G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3060G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =30V,ID =60A
RDS(ON) <4.0 m⦠@ VGS=10V
RDS(ON) <5.5 m⦠@ VGS=4.5V
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Schematic diagram
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
NCE3060G
Device
NCE3060G
Device Package
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID (100â)
IDM
PD
TJ,TSTG
Limit
30
±20
60
47
200
60
0.5
-55 To 150
Unit
V
V
A
A
A
W
W/â
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.0
â/W
Wuxi NCE Power r Co., Ltd
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