English
Language : 

NCE3050 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE3050
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3050 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =50A
RDS(ON) < 11mΩ @ VGS=10V
RDS(ON) < 16mΩ @ VGS=4.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE3050
NCE3050
TO-220-3L
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
30
±20
50
35
140
60
0.4
70
Quantity
-
Unit
V
V
A
A
A
W
W/℃
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0