NCE3010S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE3010S
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3010S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● V_DS =30V,I_D =10A
R_DS(ON) < 13.5mΩ @ V_GS=10V
R_DS(ON) < 20mΩ @ V_GS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3010S
NCE3010S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
30
±20
10
6
50
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
R_θJC
Electrical Characteristics (TA=25℃unless otherwise noted)
50
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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