NCE3007S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE3007S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3007S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in load switch and battery protection
applications.
General Features
● V_DS =-30V,I_D =-6.5A
R_DS(ON) < 42mΩ @ V_GS=-10V
R_DS(ON) < 72mΩ @ V_GS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Schematic diagram
Application
● Load switch
● battery protection
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3007
NCE3007S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
-30
±20
-6.5
-4.5
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0