NCE2333Y Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2333Y
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2333Y uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
● V_DS = -12V,I_D = -6A
R_DS(ON) < 45mΩ(max) @ V_GS=-2.5V
R_DS(ON) < 30mΩ(max) @ V_GS=-4.5V
D
G
S
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● PWM applications
● Load switch
● Power management
SOT-23-3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
2333Y
NCE2333Y
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current -Continuous
Drain Current -Pulsed ^{(Note 1)}
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_D
I_DM
P_D
T_J,T_STG
Limit
-12
±12
-6
-20
1.8
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
69
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Min Typ Max Unit
-12
-
-
V
Wuxi NCE Power Semiconductor Co., Ltd
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