NCE2312A Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2312A
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2312A uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● V_DS = 20V,I_D = 5A
R_DS(ON) < 35mΩ @ V_GS=2.5V
R_DS(ON) < 28mΩ @ V_GS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
D
G
S
Schematic diagram
Marking and pin assignment
Application
● Battery protection
● Load switch
● Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2312A
NCE2312A
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±10
5
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
100
℃/W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=20V,V_GS=0V
Min Typ Max Unit
20 22
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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