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NCE2312 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE2312
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
General Features
â VDS = 20V,ID = 4.5A
RDS(ON) < 40m⦠@ VGS=2.5V
RDS(ON) < 33m⦠@ VGS=4.5V
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
D
G
S
Schematic diagram
Marking and pin assignment
Application
âBattery protection
âLoad switch
âPower management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2312
NCE2312
SOT-23
Reel Size
Ã180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Continuous Drain Current
Drain Current-Pulsed (Note 1)
TA =25â
TA =70â
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TST G
Limit
20
±12
4.5
3.6
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
â/W
Electrical Characteristics (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
20 22
-
V
Wuxi NCE Power Semiconductor Co., Ltd
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