NCE2304 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2304
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2304 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
General Features
● V_DS = 30V,I_D = 3.6A
R_DS(ON) < 73mΩ @ V_GS=4.5V
R_DS(ON) <58mΩ @ V_GS=10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Battery protection
● Load switch
● Power management
D
G
S
Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2304
NCE2304
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±20
3.6
15
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
73.5
℃/W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=30V,V_GS=0V
Min Typ Max Unit
30 33
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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