NCE2301E Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2301E
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE2301E uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● V_DS = -20V,I_D =-2.6A
R_DS(ON) < 150mΩ @ V_GS=-2.5V
R_DS(ON) < 120mΩ @ V_GS=-4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Schematic diagram
Marking and pin assignment
Application
● Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2301E
NCE2301E
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±10
-2.6
-13
1.0
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
125
℃/W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-20V,V_GS=0V
Min Typ Max Unit
-20
-
V
-
-
-1
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0