NCE20P70G Datasheet, PDF (1/6 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE20P70G
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE20P70G uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =-20V,I_D =-70A
R_DS(ON) < 3mΩ @ V_GS=-4.5V
R_DS(ON) < 4mΩ @ V_GS=-2.5V
R_DS(ON) < 8mΩ @ V_GS=-1.8V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Schematic diagram
Pin Assignment
Application
● Load switch
● Battery protection
Package Marking and Ordering Information
DFN5x6 -8L top view
Device Marking
NCE20P70G
Device
NCE20P70G
Device Package
DFN 5x6 -8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_D (100℃)
I_DM
P_D
T_J,T_STG
Limit
-20
±10
-70
-49.5
-280
130
0.64
-55 To 150
Unit
V
V
A
A
A
W
W/℃
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
1.6
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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