NCE20P45Q Datasheet, PDF (1/6 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE20P45Q
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE20P45Q uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =-20V,I_D =-45A
R_DS(ON) < 7mΩ @ V_GS=-4.5V
R_DS(ON) < 9mΩ @ V_GS=-2.5V
R_DS(ON) < 12mΩ @ V_GS=-1.8V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Schematic diagram
Pin Assignment
Application
● Load switch
● Battery protection
Package Marking and Ordering Information
DFN 3.3x3.3 EP top view
Device Marking
NCE20P45Q
Device
NCE20P45Q
Device Package
DFN 3.3x3.3 EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_D (100℃)
I_DM
P_D
T_J,T_STG
Limit
-20
±10
-45
-35
-200
80
0.64
-55 To 150
Unit
V
V
A
A
A
W
W/℃
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
1.6
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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