NCE20N65T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – Super Junction MOSFET

NCE20N65T
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
V_DS
650
V
R_DS(ON)
190
mΩ
I_D
20
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20N65T
TO-247
20N65C3
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
I_{D (DC)}
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
I_{D (DC)}
I_{DM (pluse)}
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
125 °C
dv/dt
Maximum Power Dissipation(Tc=25℃)
P_D
Derate above 25°C
Single pulse avalanche energy ^{(Note 2)}
EAS
Avalanche current^{(Note 1)}
I_AR
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
TO-247
NCE20N65T
650
±30
20
12.5
60
50
208
1.67
690
20
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
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