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NCE20N50 Datasheet, PDF (1/9 Pages) Wuxi NCE Power Semiconductor Co., Ltd – Super Junction MOSFET | |||
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NCE20N50,NCE20N50F
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industryâs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
âNew technology for high voltage device
âLow on-resistance and low conduction losses
âsmall package
âUltra Low Gate Charge cause lower driving requirements
â100% Avalanche Tested
T VDS@ jmax
560
V
RDS(ON)
190
mâ¦
ID
20
A
Application
â Power factor correctionï¼PFCï¼
â Switched mode power supplies(SMPS)
â Uninterruptible Power Supplyï¼UPSï¼
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20N50
NCE20N50F
TO-220
TO-220F
NCE20N50
Table 1. Absolute Maximum Ratings (TC=25â)
Parameter
Symbol
Drain-Source Voltage (VGS=0Vï¼
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
ID (DC)
IDM (pluse)
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
125 °C
dv/dt
Maximum Power Dissipation(Tc=25â)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
EAS
Avalanche current(Note 1)
IAR
TO-220 TO-220F
NCE20N50 NCE20N50F
500
±30
20
20*
12.5
12.5*
60
60*
50
208
34.5
1.67
0.28
690
20
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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