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NCE20H18 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE20H18
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE20H18 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =20V,ID =185A
RDS(ON) <2.0 m⦠@ VGS=4.5V
RDS(ON) <2.4m⦠@ VGS=2.5V
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Schematic diagram
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE30H15
NCE30H15
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
20
±12
185
130
400
130
0.87
1700
Unit
V
V
A
A
A
W
W/â
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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