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NCE2014ES Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE2014ES
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2014ES uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =20V,ID =14A
RDS(ON) <7 m⦠@ VGS=4.5V
RDS(ON) <9 m⦠@ VGS=2.5V
ESD Rating: 2000V HBM
â High power and current handing capability
â Lead free product is acquired
â Surface mount package
Schematic diagram
Application
â PWM application
â Load switch
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2014ES
NCE2014ES
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±10
14
44
3
-55 To 150
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
42
â/W
Wuxi NCE Power Semiconductor Co., Ltd
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