NCE2012 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2012
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2012 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
●V_DS =20V,I_D =12A
R_DS(ON) < 8mΩ @ V_GS=10V
R_DS(ON) < 11mΩ @ V_GS=10V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Schematic diagram
Application
● DC/DC Converter
● Notebook Vcore
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2012
NCE2012
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_A=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
30
±20
12
8
40
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
50
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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