NCE2008E Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE2008E
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2008E uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● V_DS = 20V,I_D =6A
R_DS(ON) < 30mΩ @ V_GS=2.5V
R_DS(ON) < 24mΩ @ V_GS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Schematic diagram
Marking and pin assignment
Application
● PWM application
● Load switch
TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2008E
NCE2008E
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=20V,V_GS=0V
Limit
20
±12
6
30
1.5
-55 To 150
Unit
V
V
A
A
W
℃
83.3
℃/W
Min Typ Max Unit
20
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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