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NCE15H11T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE15H11T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE15H11T uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
General Features
â VDSS =150V,ID =110A
RDS(ON) < 13m⦠@ VGS=10V ï¼Typï¼10 mâ¦ï¼
Schematic diagram
â Good stability and uniformity with high EAS
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Automotive applications
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15H11T
NCE15H11T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
ID
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Limit
150
±20
110
80
390
385
2.57
1800
3
Unit
V
V
A
A
A
W
W/â
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
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