NCE1512I Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE1512I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1512I uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS = 150V,I_D =12A
R_DS(ON) <160mΩ @ V_GS=10V (Typ:130mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
D
G
S
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE1512I
NCE1512I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
150
±20
12
50
55
-55 To 175
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case ^{(Note 2)}
R_θJC
2.7
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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