|
NCE1507I Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
|
http://www.ncepower.com
Pb Free Product
NCE1507I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1507I uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS = 150V,ID = 7A
RDS(ON) < 290m⦠@ VGS=10V (Typ:255mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
D
G
S
Schematic diagram
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE1507I
NCE1507I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
7
50
30
-55 To 175
Unit
V
V
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJC
5
â/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
▷ |