NCE1216 Datasheet, PDF (1/6 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE1216
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE1216 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.
General Features
● V_DS = -12V,I_D = -16A
R_DS(ON) < 22mΩ @ V_GS=-2.5V
R_DS(ON) < 18mΩ @ V_GS=-4.5V
D
G
S
Schematic diagram
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge
Application
● PWM applications
● Load switch
● Battery charge in cellular handset
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
Device
Device Package
NCE1216
NCE1216
DFN2X2-6L
Reel Size
-
Tape Width
-
Quantity
-
Absolute maximum ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current -Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-12
±12
-16
-65
18
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
R_θJC
6.9
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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