NCE1205 Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE1205
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE1205 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
V_DS =12V,I_D =5A
R_DS(ON) <32mΩ @ V_GS=4.5V
R_DS(ON) <42mΩ @ V_GS=2.5V
R_DS(ON) < 80mΩ @ V_GS=1.8V
● P-Channel
V_DS = -12V,I_D = -5A
R_DS(ON) <74mΩ @ V_GS=-4.5V
R_DS(ON) <110mΩ @ V_GS=-2.5V
R_DS(ON) < 220mΩ @ V_GS=-1.8V
● Load Switch for Portable Devices
N-channel
P-channel
Pin assignment
Package Marking and Ordering Information
Device Marking
1205
Device
NCE1205
Device Package
DFN2X2-6L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_A=25℃
T_A=70℃
Maximum Power Dissipation
T_A=25℃
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
N-Channel
12
±12
5
4.5
20
1.9
-55 To 150
P-Channel
-12
±12
-5
-3.8
-15
1.9
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^(Note2)
Thermal Resistance,Junction-to-Ambient ^(Note2)
R_θJA
R_θJA
N-Ch
P-Ch
65
℃ /W
65
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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