NCE10G120 Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – 1200V, 10A, Trench NPT IGBT

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NCE10G120
1200V, 10A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: V_CE(sat)=2.0V@I_C=10A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE10G120
GCE
C
G
E
Symbol Description
Ratings
V_CES
Collector to Emitter Voltage
V_GES
Gate to Emitter Voltage
I_C
Continuous Collector Current @T_C=25°C
Continuous Collector Current @T_C=100°C
I_CM(1)
P_D
T_J
T_stg
Pulsed Collector Current
Maximum Power Dissipation @T_C=25°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
T_L
case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
1200
+/-25
16
10
24
138
-55 to +150
-55 to +150
260
Units
V
V
A
A
A
W
°C
°C
°C
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