NCE1012E Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE1012E
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1012E uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
● V_DS = 20V,I_D =0.6A
R_DS(ON) <350mΩ @ V_GS=4.5V
R_DS(ON) <500mΩ @ V_GS=2.5V
● High power and current handing capability
● Lead free product is acquired
● Gate-Source ESD protection
Application
● Battery operated systems
● Load/ power switching cell phones pagers
● Power supply converter circuits
Schematic diagram
Marking and pin assignment
SOT-523 top view
Package Marking and Ordering Information
Device Marking Device Device Package
1012E
NCE1012E
SOT-523
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±10
0.6
1
150
-55 To 150
Unit
V
V
A
A
mW
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
833
℃/W
Min Typ Max Unit
20 22
-
V
Wuxi NCE Power Semiconductor Co., Ltd
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