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NCE04N65 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – Super Junction MOSFET | |||
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NCE04N65
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industryâs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
âNew technology for high voltage device
âLow on-resistance and low conduction losses
âsmall package
âUltra Low Gate Charge cause lower driving requirements
â100% Avalanche Tested
VDS
650
V
RDS(ON)
950
mâ¦
ID
4.5
A
Application
â Power factor correctionï¼PFCï¼
â Switched mode power supplies(SMPS)
â Uninterruptible Power Supplyï¼UPSï¼
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE04N65
TO-251S
NCE04N65
Table 1. Absolute Maximum Ratings (TC=25â)
Parameter
Symbol
Drain-Source Voltage (VGS=0Vï¼
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Drain Source voltage slope, VDS = 480 V, ID = 4.5 A, Tj =
125 °C
dv/dt
Maximum Power Dissipation(Tc=25â)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
EAS
Avalanche current(Note 1)
IAR
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
TO-251S
NCE04N65
650
±30
4.5
2.8
13.5
50
50
0.4
130
4.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
v1.0
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