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NCE0208IA Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE0208IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0208IA uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =200V,ID =8A
RDS(ON) <300m⦠@ VGS=10Vï¼Typï¼260mâ¦ï¼
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Low gate to drain charge to reduce switching losses
Schematic diagram
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
100% âVds TESTED!
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0208IA
NCE0208IA
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
200
±20
8
5.6
20
55
-55 To 150
Unit
V
V
A
A
A
W
â
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
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