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NCE0205IA Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE0205IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205IA uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS = 200V,ID =5A
RDS(ON) < 580m⦠@ VGS=10V (Typ:520mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Schematic diagram
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin assignment
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0205IA
NCE0205IA
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
200
±20
5
20
30
-55 To 150
Unit
V
V
A
A
W
â
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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