NCE0205I Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE0205I
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0205I uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =200V,I_D =5A
R_DS(ON) < 580mΩ @ V_GS=10V
（Typ：520mΩ）
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% ∆Vds TESTED!
TO-251 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
0205
NCE0205I
TO-251
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
200
±20
5
3.5
20
50
-55 To 175
Unit
V
V
A
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
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