NCE01P30K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE01P30K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P30K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It can
be used in a wide variety of applications. It is ESD protested.
General Features
● V_DS =-100V,I_D =-30A
R_DS(ON) <58mΩ @ V_GS=-10V (Typ:50mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
Schematic diagram
Application
● Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01P30K
NCE01P30K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-100
±20
-30
-21
-120
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case ^{(Note 2)}
R_θJc
1.25
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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