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NCE01P18D Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE01P18D
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of applications. It is ESD protested.
General Features
â VDS =-100V,ID =-18A
RDS(ON) <100m⦠@ VGS=-10V
(Typ:85mâ¦)
â Super high dense cell design
â Advanced trench process technology
â Reliable and rugged
â High density cell design for ultra low on-Resistance
Schematic diagram
Application
âPower management in notebook computer
âPortable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01P18D
NCE01P18D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-18
-12
-72
70
0.56
-55 To 150
Unit
V
V
A
A
A
W
W/â
â
Wuxi NCE Power Semiconductor Co., Ltd
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