NCE01P13 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE01P13
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P13 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be
used in a wide variety of applications. It is ESD protested.
General Features
● V_DS =-100V,I_D =-13A
R_DS(ON) <200mΩ @ V_GS=-10V
(Typ:170mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance
Schematic diagram
Application
● Power switch
● DC/DC converters
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01P13
NCE01P13
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-100
±20
-13
-9.2
-52
40
0.32
110
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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