NCE01H29T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE01H29T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H29T uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It can
be used in a wide variety of other applications.
General Features
● V_DSS =100V,I_D =290A
R_DS(ON) < 3.0mΩ @ V_GS=10V （Typ：2.4mΩ）
Schematic diagram
● Good stability and uniformity with high E_AS
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● DC motor drive
● High efficiency synchronous rectification in SMPS
● Uninterruptible power supply
● High speed power switching
● Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H29T
NCE01H29T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Limit
100
±20
290
200
1120
460
3.07
Unit
V
V
A
A
A
W
W/℃
Wuxi NCE Power Semiconductor Co., Ltd
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