NCE0160S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE0160S
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0160S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
GENERAL FEATURES
● V_DS = 100V,I_D =60A
R_DS(ON) <14mΩ @ V_GS=10V
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Schematic diagram
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
PowerPAK SO-8 Bottom view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0160
NCE0160S
PowerPAK SO-8
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=70℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
I_D
I_D (70℃)
I_DM
P_D
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
100
±25
60
50
80
105
0.84
550
-55 To 150
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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