NCE0160G Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE0160G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0160G uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
General Features
● V_DS = 100V,I_D =60A
R_DS(ON) <16mΩ @ V_GS=12.6V
Schematic diagram
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Marking and pin assignment
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
100% ΔVds TESTED!
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0160G
NCE0160G
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=70℃)
I_D
I_D (70℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
100
±20
60
50
80
105
0.70
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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