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NCE0160AG Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE0160AG
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0160AG uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS = 100V,ID =60A
RDS(ON) < 17m⦠@ VGS=10V
(Typ:13.5mâ¦)
Schematic diagram
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Marking and pin assignment
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0160AG
NCE0160AG
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
-
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
60
40
160
65
0.44
580
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.3
â/W
Wuxi NCE Power Semiconductor Co., Ltd
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