NCE0130K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE0130K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0130K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS = 100V,I_D =30A
R_DS(ON) < 28mΩ @ V_GS=10V
(Typ:24mΩ)
Schematic diagram
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0130K
NCE0130K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
I_D
Drain Current-Continuous
I_D (100℃)
Drain Current-Continuous(TC=100℃)
I_DM
Pulsed Drain Current
P_D
Maximum Power Dissipation
Derating factor
E_AS
Single pulse avalanche energy ^{(Note 5)}
T_J,T_STG
Operating Junction and Storage Temperature Range
Limit
100
±20
30
21
70
85
0.57
256
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Co., Ltd
Page 1
v1.0