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NCE0130G Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE0130G
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0130G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS = 100V,ID =30A
RDS(ON) < 28m⦠@ VGS=10V
(Typ:24mâ¦)
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
Schematic diagram
Marking and pin assignment
DFN5X6-8L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0130G
NCE0130G
DFN5X6-8L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
ID (100â)
Drain Current-Continuous(TC=100â)
IDM
Pulsed Drain Current
PD
Maximum Power Dissipation
Derating factor
TJ,TSTG
Operating Junction and Storage Temperature Range
Limit
100
±20
30
21
70
75
0.5
-55 To 175
Unit
V
V
A
A
A
W
W/â
â
Thermal Characteristic
RθJC
Thermal Resistance, Junction-to-Case (Note 2)
2.0
â/W
Wuxi NCE Power Co., Ltd
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