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NCE0110AS Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE0110AS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0110AS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS = 100V,ID =10A
RDS(ON) < 17m⦠@ VGS=10V
(Typ:14mâ¦)
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
Schematic diagram
Application
â DC/DC Primary Side Switch
â Telecom/Server
â Synchronous Rectification
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0110AS
NCE0110AS
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
100
±20
10
7
70
3.1
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
â/W
Electrical Characteristics (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
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