2N7002 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

http://www.ncepower.com
Pb Free Product
2N7002
NCE N-Channel Enhancement Mode Power MOSFET
GENERAL FEATURES
● V_DS = 60V,I_D = 0.115A
R_DS(ON) < 3Ω @ V_GS=4.5V
R_DS(ON) < 2Ω @ V_GS=10V
● Lead free product is acquired
● Surface Mount Package
Application
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
7002
2N7002
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
625
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=60V,V_GS=0V
Min Typ Max Unit
60
V
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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