N08T1630CXB Datasheet, PDF (2/9 Pages) NanoAmp Solutions, Inc. – 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

NanoAmp Solutions, Inc.
Functional Block Diagram
N08T1630CxB
Address
Inputs
A0 - A18
Address
Decode
Logic
CE1
CE2
WE
Control
OE
Logic
UB
LB
512K
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 _CE2¹ WE OE UB LB
I/O₀ - I/O₁₅₂
MODE
POWER
H
X
X
X
X
X
X
L
X
X
X
X
L
H
X
X
H
H
L
H
L
X⁴
L²
L²
L
H
H
L
L²
L²
L
H
H
H
L²
L²
High Z
High Z
High Z
Data In
Data Out
High Z
Standby³
Standby³
Standby³
Write
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. CE2 only applies to BGA package.
2. When UB and LB are in select mode (low), I/O₀ - I/O₁₅ are affected as shown. When LB only is in the select mode only I/O₀ - I/O₇
are affected as shown. When UB is in the select mode only I/O₈ - I/O₁₅ are affected as shown.
3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance¹
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
C_IN
V_IN = 0V, f = 1 MHz, T_A = 25^oC
C_I/O
V_IN = 0V, f = 1 MHz, T_A = 25^oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8
pF
8
pF
(DOC# 14-02-004 REV H ECN# 01-1102)
2
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.