N64T1630C1B Datasheet, PDF (1/18 Pages) NanoAmp Solutions, Inc. – 64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M × 16 Bits

NanoAmp Solutions, Inc.
670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: [phone]
www.nanoamp.com
N64T1630C1B
Advance Information
64Mb Ultra-Low Power Asynchronous CMOS PSRAM
4M × 16 Bits
Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode. The device
includes a ZZ input for deep sleep as well as
several other power saving modes: Partial Array
Self Refresh mode where data is retained in a
portion of the array and Temperature
Compensated Refresh. Both these modes reduce
standby current drain. The N64T1630C1B can be
operated in a standard asynchronous mode and
data can also be read in a 4-word page mode for
fast access times. The die has separate power
rails, VccQ and VssQ for the I/O to be run from a
separate power supply from the device core.
Features
• Dual voltage rails for optimum power & per-
formance
Vcc - 2.7V - 3.3V
Vccq - 2.7V to 3.3V
• Fast Cycle Times
T_ACC < 70 nS (60ns future)
T_PACC < 25 nS
• Very low standby current
I_SB < 170µA
• Very low operating current
Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)
Table 1: Product Family
Part Number
Package Operating
Type
Temperature
N64T1630C1BZ
BGA _-25^o_{C to +85}^o_C
Ball Congiguration
123456
A LB OE A0 A1 A2 ZZ
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 A21 A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H A18 A8 A9 A10 A11 A20
48 Pin BGA (top view)
6 x 8 mm
Power
Supply
I/O Supply
2.7 - 3.3V
2.7 - 3.3V
Ball Description
Speed
70ns
Standby
Current (I_SB),
Max
170µA
Pin Name
A₀-A₂₁
WE
CE
ZZ
OE
LB
UB
I/O₀-I/O₁₅
V_CC
V_SS
V_CCQ
V_SSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
Stock No. 23357- Rev E 07/05
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.