N04L1618C2A Datasheet, PDF (1/10 Pages) NanoAmp Solutions, Inc. – 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: [phone]
www.nanoamp.com
N04L1618C2A
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256Kx16 bit
Overview
Features
The N04L1618C2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N04L163WC1A, which is processed to
operate at higher voltages. The device operates
with two chip enable (CE1 and CE2) controls and
output enable (OE) to allow for easy memory
expansion. Byte controls (UB and LB) allow the
upper and lower bytes to be accessed
independently and can also be used to deselect
the device. The N04L1618C2A is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40^oC to +85^oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
0.7mA at 1.8V and 1µs (Typical)
• Low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number Package Type
N04L1618C2AB 48 - BGA
N04L1618C2AB2 48-BGA Green
Operating
Temperature
-40^oC to +85^oC
Power
Supply (Vcc)
Speed
Standby
Operating
Current (I_SB), Current (Icc),
Typical
Typical
70ns @ 1.8V
1.65V - 2.2V
85ns @ 1.65V
0.5 µA
0.7 mA @
1MHz
(DOC# 14-02-016 REV G ECN# 01-1266)
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.