90MDS Datasheet, PDF (2/3 Pages) Naina Semiconductor ltd. – Three - Phase Bridge Rectifier Excellent power volume ratio

Naina Semiconductor Ltd.
90 MDS
Electrical Specifications (T_J = 25⁰C unless otherwise noted)
Parameters
Conditions
Maximum DC output current
Maximum peak one-cycle forward,
non-repetitive surge current
120⁰ Rect conduction angle, T_C = 85⁰C
t = 10ms
No voltage
t = 8.3ms
reapplied
t = 8.3ms
t = 10ms
100% V_RRM
reapplied
Maximum I²t for fusing
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
No voltage
reapplied
100% V_RRM
reapplied
Maximum J²âˆšt for fusing
T = 0.1 to 10ms, no voltage reapplied
T_J = T_J max.
Low level value of threshold voltage [ 16.7% * π * I_F(AV) < I < π * I_F(AV) ], @ T_J max
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
[ I > π > I_F(AV) ], @ T_J max
[ 16.7% * π * I_F(AV) < I < π * I_F(AV) ], @ T_J max
[ I > π * I_F(AV) ], @ T_J max
Maximum forward voltage drop
I_pk = 100A, t_P = 400 µs single junction
Symbol
I₀
I_FSM
I²t
J²âˆšt
V_F(TO)1
V_F(TO)2
r₁
r₂
V_FM
Values
90
770
810
650
680
3000
2700
2100
1900
30000
0.89
1.05
5.11
4.64
1.6
Units
A
A
A²s
A²âˆšs
V
V
mΩ
mΩ
V
RMS isolation voltage
f = 50Hz, t = 1ms, all terminals shorted
V_ISO
4000
V
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: [phone] • Fax: [phone]
[e-mail] • www.nainasemi.com