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60MDS Datasheet, PDF (2/3 Pages) Naina Semiconductor ltd. – Three - Phase Bridge Rectifier Excellent power volume ratio | |||
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Naina Semiconductor Ltd.
60 MDS
Electrical Specifications (TJ = 250C unless otherwise noted)
Parameters
Conditions
Maximum DC output current
Maximum peak one-cycle forward,
non-repetitive surge current
1200 Rect conduction angle, TC = 850C
t = 10ms
No voltage
t = 8.3ms
reapplied
t = 8.3ms
t = 10ms
100% VRRM
reapplied
Maximum I2t for fusing
T = 8.3ms
T = 10ms
T = 8.3ms
T = 10ms
No voltage
reapplied
100% VRRM
reapplied
Maximum J2ât for fusing
T = 0.1 to 10ms, no voltage reapplied
TJ = TJ max.
Low level value of threshold voltage [ 16.7% * Ï * IF(AV) < I < Ï * IF(AV) ], @ TJ max
High level value of threshold
voltage
Low level value of forward slope
resistance
High level value of forward slope
resistance
[ I > Ï > IF(AV) ], @ TJ max
[ 16.7% * Ï * IF(AV) < I < Ï * IF(AV) ], @ TJ max
[ I > Ï * IF(AV) ], @ TJ max
Maximum forward voltage drop
Ipk = 100A, tP = 400 µs single junction
Symbol
I0
IFSM
I2t
J2ât
VF(TO)1
VF(TO)2
r1
r2
VFM
Values
60
420
440
350
370
870
790
610
560
8700
0.85
1.07
8.04
7.08
1.75
Units
A
A
A2s
A2âs
V
V
mâ¦
mâ¦
V
RMS isolation voltage
f = 50Hz, t = 1ms, all terminals shorted
VISO
4000
V
Diode Configuration
2
D-95, Sector 63, Noida â 201301, India ⢠Tel: 0120-4205450 ⢠Fax: 0120-4273653
sales@nainasemi.com ⢠www.nainasemi.com
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